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Temperature dependence of electrical properties of 6H-SiC buried gate JFET

✍ Scribed by Raynaud, C.; Richier, C.; Guillot, G.

Book ID: 123551875
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 428 KB
Volume: 6
Category: Article
ISSN: 0925-9635
DOI: 10.1016/S0925-9635(97)00113-1

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