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Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

✍ Scribed by Koizumi, Atsushi; Suda, Jun; Kimoto, Tsunenobu

Book ID: 121836296
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 402 KB
Volume: 106
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3158565

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## Abstract We report on the growth of thin, aluminium doped, homo‐epitaxial layers of 4H–SiC using a threefold mixture of purified hexamethyldisilane (HMDS) admixted with propane (P) and trimethylaluminium (TMA). The growth has been performed in an AP‐CVD, cold wall, vertical reactor in which the