✦ LIBER ✦
Generation of Defects in Heavily Al-Doped 4H-SiC Epitaxial Layers Grown by the Low-Temperature Halo-Carbon Method
✍ Scribed by Hrishikesh Das; Bharat Krishnan; Siva Prasad Kotamraju; Yaroslav Koshka
- Publisher
- Springer US
- Year
- 2010
- Tongue
- English
- Weight
- 915 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0361-5235
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