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Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

✍ Scribed by Linnarsson, M. K.; Janson, M. S.; Zimmermann, U.; Svensson, B. G.; Persson, P. O. Å.; Hultman, L.; Wong-Leung, J.; Karlsson, S.; Schöner, A.; Bleichner, H.; Olsson, E.

Book ID
120481313
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
647 KB
Volume
79
Category
Article
ISSN
0003-6951

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