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Control of Al and B doping transients in 6H and 4H SiC grown by vapor phase epitaxy

✍ Scribed by N. Nordell; A. Schöner; M. K. Linnarsson

Book ID
107457524
Publisher
Springer US
Year
1997
Tongue
English
Weight
625 KB
Volume
26
Category
Article
ISSN
0361-5235

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## Abstract We report on the growth of thin, aluminium doped, homo‐epitaxial layers of 4H–SiC using a threefold mixture of purified hexamethyldisilane (HMDS) admixted with propane (P) and trimethylaluminium (TMA). The growth has been performed in an AP‐CVD, cold wall, vertical reactor in which the