Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers—Grown by hot-wall CVD

✍ Scribed by G. Wagner; B. Thomas; J. Doerschel; J. Dolle; K. Irmscher

• Book ID: 107452595
• Publisher: Springer US
• Year: 2001
• Tongue: English
• Weight: 999 KB
• Volume: 30
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/s11664-001-0017-z