Electrical properties of gallium- and antimony-doped silicon layers, grown by solid phase epitaxy in a molecular beam epitaxial growth chamber

✍ Scribed by A. Casel; H. Kibbel; F. Schäffler

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 282 KB
• Volume: 183
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(89)90461-6