✦ LIBER ✦

Growth of oxygen-doped silicon epitaxial films by co-evaporation of silicon and SiO in a molecular beam epitaxial system

✍ Scribed by Wei-Xin Ni; György Radnoczi; Göran V. Hansson

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 830 KB
Volume: 184
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(90)90438-j

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical properties of gallium- and an

Electrical properties of gallium- and antimony-doped silicon layers, grown by solid phase epitaxy in a molecular beam epitaxial growth chamber

✍ A. Casel; H. Kibbel; F. Schäffler 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 282 KB

In situ studies of epitaxial silicon gro

In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy

✍ B. A. Joyce; J. Zhang; A. G. Taylor; M. H. Xie; J. M. Fernández; A. K. Lees 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 297 KB 👁 1 views

The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ®lms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of re¯ection high-energy ele

Growth by molecular beam epitaxy and str

Growth by molecular beam epitaxy and structural study of lattice matched MgxCa1−xF2 films on silicon

✍ N.L. Yakovlev; Yu.V. Shusterman 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 234 KB

A comparative study of heavy boron dopin

A comparative study of heavy boron doping in silicon and Si1−x Gex layers grown by molecular beam epitaxy

✍ M.R. Sardela Jr.; W.-X. Ni; H. Radpisheh; G.V. Hansson 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 359 KB

5184. Growth of dislocation-free silicon

5184. Growth of dislocation-free silicon films by molecular beam epitaxy (MBE): H Sugiura and M Yamaguchi, J Vac Sci Technol, 19 (2), 1981, 157–160

📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 141 KB

Growth by molecular beam epitaxy (MBE) a

Growth by molecular beam epitaxy (MBE) and structural characterization of GaAs and AlGaAs on silicon : B. Bartenlian. Revue Technique Thomson-CSF24(2), 313 (1992). (In French.)

📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 229 KB