✦ LIBER ✦
5184. Growth of dislocation-free silicon films by molecular beam epitaxy (MBE): H Sugiura and M Yamaguchi, J Vac Sci Technol, 19 (2), 1981, 157–160
- Publisher
- Elsevier Science
- Year
- 1982
- Tongue
- English
- Weight
- 141 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.