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Growth by molecular beam epitaxy (MBE) and structural characterization of GaAs and AlGaAs on silicon : B. Bartenlian. Revue Technique Thomson-CSF24(2), 313 (1992). (In French.)


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
229 KB
Volume
33
Category
Article
ISSN
0026-2714

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