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Effects of H2/NH3flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD

✍ Scribed by Chien-Cheng Yang; Pao-Ling Koh; Meng-Chyi Wu; Chih-hao Lee; Gou-Chung Chi

Book ID: 107458045
Publisher: Springer US
Year: 1999
Tongue: English
Weight: 215 KB
Volume: 28
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-999-0244-2

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