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Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging

✍ Scribed by Kendrick X. Liu; Robert E. Stahlbush; Kok-Keong Lew; Rachael L. Myers-Ward; Brenda L. VanMil; Kurt D. Gaskill; Charles R. Eddy

Book ID
107455136
Publisher
Springer US
Year
2008
Tongue
English
Weight
474 KB
Volume
37
Category
Article
ISSN
0361-5235

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