𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers

✍ Scribed by Nadeemullah A. Mahadik; Robert E. Stahlbush; Syed B. Qadri; Orest J. Glembocki; Dimitri A. Alexson; Karl D. Hobart; Joshua D. Caldwell; Rachael L. Myers-Ward; Joseph L. Tedesco; Charles R. Eddy; D. Kurt Gaskill

Book ID
107457225
Publisher
Springer US
Year
2011
Tongue
English
Weight
533 KB
Volume
40
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Control of epitaxial layers grown on 4H-
Control of epitaxial layers grown on 4H-SiC: from 3C microcrystalline inclusions to type II quantum well structures
✍ Juillaguet, S. ;Balloud, C. ;Soulière, V. ;Sartel, C. ;Camassel, J. ;Y. Monteil, 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 141 KB

## Abstract We report the results of a series of LTPL (Low Temperature PhotoLuminescence) investigation performed on n‐type, non‐intentionally doped, 4H–SiC samples. We focus on the defect structure introduced by a growth fault in the stacking sequence. We treat the fault as a 3C quantum well embed