Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes
✍ Scribed by S. Juillaguet; T. Robert; J. Camassel
- Book ID
- 108215611
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 188 KB
- Volume
- 165
- Category
- Article
- ISSN
- 0921-5107
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## Abstract We report the results of a cathodoluminescence (CL) investigation performed on as‐grown stacking faults in a thick, undoped, 4H‐SiC epitaxial layer grown by CVD. To investigate the size and optical signature of the defects we used, first, room‐temperature (RTCL) and then low‐temperature
A transmission electron microscopy (TEM) study on the generation of stacking faults (SFs) and stacking fault (SF) induced inclusion during 3C-SiC growth by Continuous Feed Physical Vapour Transport (CF-PVT) method on 4H-SiC substrates is presented. A transition region of about 100 nm between the 4H-