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Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers

✍ Scribed by Yi Chen; Ning Zhang; Michael Dudley; Joshua D. Caldwell; Kendrick X. Liu; Robert E. Stahlbush; Xianrong Huang; Albert T. Macrander; David R. Black

Book ID: 107455062
Publisher: Springer US
Year: 2007
Tongue: English
Weight: 415 KB
Volume: 37
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-007-0328-9

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