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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

✍ Scribed by M. E. Twigg; Y. N. Picard; J. D. Caldwell; C. R. Eddy; M. A. Mastro; R. T. Holm; P. G. Neudeck; A. J. Trunek; J. A. Powell

Book ID: 107455832
Publisher: Springer US
Year: 2010
Tongue: English
Weight: 364 KB
Volume: 39
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1143-2

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