## Abstract The dislocation structures induced by lowβplasticβstrainβamplitude cyclic deformation of [111] multipleβslipβoriented Cu single crystals were investigated using electron channelling contrast (ECC) technique in scanning electron microscopy (SEM). At a low plastic strain amplitude Ξ³~pl~ o
Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast
β Scribed by Martin A. Crimp
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 443 KB
- Volume
- 69
- Category
- Article
- ISSN
- 1059-910X
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β¦ Synopsis
Abstract
The imaging and characterization of dislocations is commonly carried out by thin foil transmission electron microscopy (TEM) using diffraction contrast imaging. However, the thin foil approach is limited by difficult sample preparation, thin foil artifacts, relatively small viewable areas, and constraints on carrying out in situ studies. Electron channeling imaging of electron channeling contrast imaging (ECCI) offers an alternative approach for imaging crystalline defects, including dislocations. Because ECCI is carried out with field emission gun scanning electron microscope (FEGβSEM) using bulk specimens, many of the limitations of TEM thin foil analysis are overcome. This paper outlines the development of electron channeling patterns and channeling imaging to the current state of the art. The experimental parameters and set up necessary to carry out routine channeling imaging are reviewed. A number of examples that illustrate some of the advantages of ECCI over thin foil TEM are presented along with a discussion of some of the limitations on carrying out channeling contrast analysis of defect structures. Microsc. Res. Tech. 69:374β381, 2006. Β© 2006 WileyβLiss, Inc.
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