✦ LIBER ✦
Energy levels of dislocations in Ge under different conditions. Comparison between images of electron- and light-beam scanning microscopy
✍ Scribed by Dr. A. Castaldini; A. Cavallini; P. Gondi
- Publisher
- John Wiley and Sons
- Year
- 1981
- Tongue
- English
- Weight
- 328 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
Abstract
Thermal treatment effects on Ge deformed at 350°C are consistent with reductions of the effective dangling bond densities on the dislocations. On account of difficulties in the application of known statistics the phenomena observed are briefly discussed by considering a heavily doped cylinder model for the dislocations. Observations with infrared beam induced currents emphasize the necessity of considering the effects of other defects, introduced together with dislocations during deformation, in particular for the interpretation of photoconductivity data.