✦ LIBER ✦

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

✍ Scribed by Bin Chen; Jun Chen; Takashi Sekiguchi; Takasumi Ohyanagi; Hirofumi Matsuhata; Akimasa Kinoshita; Hajime Okumura

Book ID: 107455856
Publisher: Springer US
Year: 2010
Tongue: English
Weight: 388 KB
Volume: 39
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1168-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Formation and properties of stacking fau

Formation and properties of stacking faults in nitrogen-doped 4H-SiC

✍ K. Irmscher; M. Albrecht; M. Rossberg; H.-J. Rost; D. Siche; G. Wagner 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 351 KB

A high density of double stacking faults consisting of six Si-C bilayers in cubic stacking sequence could be observed in 4H-SiC crystals with nitrogen doping concentrations exceeding 2 Â 10 19 cm À3 after annealing at temperatures above 1100 1C. The double stacking faults form by glide of two partia

Cathodoluminescence investigation of sta

Cathodoluminescence investigation of stacking faults extension in 4H-SiC

✍ Juillaguet, S. ;Albrecht, M. ;Camassel, J. ;Chassagne, T. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 333 KB

## Abstract We report the results of a cathodoluminescence (CL) investigation performed on as‐grown stacking faults in a thick, undoped, 4H‐SiC epitaxial layer grown by CVD. To investigate the size and optical signature of the defects we used, first, room‐temperature (RTCL) and then low‐temperature

Partial dislocations and stacking faults

Partial dislocations and stacking faults in 4H-SiC PiN diodes

✍ M. E. Twigg; R. E. Stahlbush; M. Fatemi; S. D. Arthur; J. B. Fedison; J. B. Tuck 📂 Article 📅 2004 🏛 Springer US 🌐 English ⚖ 762 KB

Sources of Epitaxial Growth-Induced Stac

Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC

✍ Gan Feng; Jun Suda; Tsunenobu Kimoto 📂 Article 📅 2010 🏛 Springer US 🌐 English ⚖ 383 KB

Structural and electrical studies of par

Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC

✍ L. Ottaviani; H. Idrissi; P. Hidalgo; M. Lancin; B. Pichaud 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 620 KB

Characterization of major in-grown stack

Characterization of major in-grown stacking faults in 4H-SiC epilayers

✍ Gan Feng; Jun Suda; Tsunenobu Kimoto 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 363 KB

The optical properties of major in-grown stacking faults (IGSFs) in 4H-SiC epilayers have been characterized by micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping. Strong PL emissions from the IGSFs are observed even at room temperature. Three kinds of IGSFs have been identifi