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Partial dislocations and stacking faults in 4H-SiC PiN diodes

✍ Scribed by M. E. Twigg; R. E. Stahlbush; M. Fatemi; S. D. Arthur; J. B. Fedison; J. B. Tucker; S. Wang


Book ID
107453248
Publisher
Springer US
Year
2004
Tongue
English
Weight
762 KB
Volume
33
Category
Article
ISSN
0361-5235

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## Abstract We report the results of a cathodoluminescence (CL) investigation performed on as‐grown stacking faults in a thick, undoped, 4H‐SiC epitaxial layer grown by CVD. To investigate the size and optical signature of the defects we used, first, room‐temperature (RTCL) and then low‐temperature