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Stacking-fault formation and propagation in 4H-SiC PiN diodes

โœ Scribed by R. E. Stahlbush; M. Fatemi; J. B. Fedison; S. D. Arthur; L. B. Rowland; S. Wang


Book ID
107452758
Publisher
Springer US
Year
2002
Tongue
English
Weight
318 KB
Volume
31
Category
Article
ISSN
0361-5235

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A high density of double stacking faults consisting of six Si-C bilayers in cubic stacking sequence could be observed in 4H-SiC crystals with nitrogen doping concentrations exceeding 2 ร‚ 10 19 cm ร€3 after annealing at temperatures above 1100 1C. The double stacking faults form by glide of two partia