Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes
β Scribed by Joshua D. Caldwell; Kendrick X. Liu; Marko J. Tadjer; Orest J. Glembocki; Robert E. Stahlbush; Karl D. Hobart; Fritz Kub
- Book ID
- 107453554
- Publisher
- Springer US
- Year
- 2007
- Tongue
- English
- Weight
- 255 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0361-5235
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## Abstract We report the results of a cathodoluminescence (CL) investigation performed on asβgrown stacking faults in a thick, undoped, 4HβSiC epitaxial layer grown by CVD. To investigate the size and optical signature of the defects we used, first, roomβtemperature (RTCL) and then lowβtemperature
A high density of double stacking faults consisting of six Si-C bilayers in cubic stacking sequence could be observed in 4H-SiC crystals with nitrogen doping concentrations exceeding 2 Γ 10 19 cm Γ3 after annealing at temperatures above 1100 1C. The double stacking faults form by glide of two partia