𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes

✍ Scribed by Joshua D. Caldwell; Kendrick X. Liu; Marko J. Tadjer; Orest J. Glembocki; Robert E. Stahlbush; Karl D. Hobart; Fritz Kub


Book ID
107453554
Publisher
Springer US
Year
2007
Tongue
English
Weight
255 KB
Volume
36
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Cathodoluminescence investigation of sta
✍ Juillaguet, S. ;Albrecht, M. ;Camassel, J. ;Chassagne, T. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 333 KB

## Abstract We report the results of a cathodoluminescence (CL) investigation performed on as‐grown stacking faults in a thick, undoped, 4H‐SiC epitaxial layer grown by CVD. To investigate the size and optical signature of the defects we used, first, room‐temperature (RTCL) and then low‐temperature

Formation and properties of stacking fau
✍ K. Irmscher; M. Albrecht; M. Rossberg; H.-J. Rost; D. Siche; G. Wagner πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 351 KB

A high density of double stacking faults consisting of six Si-C bilayers in cubic stacking sequence could be observed in 4H-SiC crystals with nitrogen doping concentrations exceeding 2 Γ‚ 10 19 cm Γ€3 after annealing at temperatures above 1100 1C. The double stacking faults form by glide of two partia