## Abstract We report the results of a cathodoluminescence (CL) investigation performed on asβgrown stacking faults in a thick, undoped, 4HβSiC epitaxial layer grown by CVD. To investigate the size and optical signature of the defects we used, first, roomβtemperature (RTCL) and then lowβtemperature
Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC
β Scribed by Gan Feng; Jun Suda; Tsunenobu Kimoto
- Book ID
- 107456880
- Publisher
- Springer US
- Year
- 2010
- Tongue
- English
- Weight
- 383 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0361-5235
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