Characterization of major in-grown stacking faults in 4H-SiC epilayers

✍ Scribed by Gan Feng; Jun Suda; Tsunenobu Kimoto

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 363 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.189

✦ Synopsis

The optical properties of major in-grown stacking faults (IGSFs) in 4H-SiC epilayers have been characterized by micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping. Strong PL emissions from the IGSFs are observed even at room temperature. Three kinds of IGSFs have been identified in the samples based on the micro-PL spectra. Each kind of IGSF shows the distinct PL emission peak located at 460, 480, and 500 nm, respectively. The micro-PL intensity mapping at the emission band of each IGSF has been performed to spatially profile the IGSF. The shapes, distributions, and densities of IGSFs in the epilayers are then presented. The microstructure of each IGSF has been revealed by high-resolution transmission electron microscopy observations. The stacking sequences of three IGSFs are determined as (4,4), (3,5), and (6,0) in the Zhdanov's notation, respectively, which apparently differ from the perfect 4H-SiC, (2,2). Three identified IGSFs are then classified as quadruple Shockley SFs, triple Shockley SFs, and double Shockley SFs, respectively, based on the shear formation model.