✦ LIBER ✦

Optical characterization of deep states associated with oxidation-induced stacking faults in silicon

✍ Scribed by A. Castaldini; A. Cavallini; J.H. Evans; I.D. Hawkins; A.R. Peaker; M. Vandini

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 401 KB
Volume: 24
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(94)90321-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Deep states associated with oxidation in

Deep states associated with oxidation induced stacking faults in RTA p-type silicon before and after copper diffusion

✍ M Saritas; A.R Peaker 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 880 KB

Light-beam-induced transient spectroscop

Light-beam-induced transient spectroscopy of oxidation-induced stacking faults in silicon

✍ J.A. Davidson; J.H. Evans; A.R. Peaker 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 300 KB

Temperature dependence of oxidation indu

Temperature dependence of oxidation induced stacking faults and oxygen incorporation in dislocation-free Czochralski silicon

✍ M.S. Bawa; W.J. Bell; H.M. Grimes; T.J. Shaffner 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 363 KB

TCE oxidation for the elimination of oxi

TCE oxidation for the elimination of oxidation-induced stacking faults in silicon: T. Hattori. Solid-St. Technol. p. 85 (November 1979)

📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 122 KB

Preoxidation gettering of oxidation-indu

Preoxidation gettering of oxidation-induced stacking faults in silicon by the phosphorus diffusion process : Jhy-Horng Chen and Mao-Chieh Chen. Int. J. Electron.47, (6) 555 (1979)

📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 149 KB

Photo-induced changes in the bulk densit

Photo-induced changes in the bulk density of gap states in hydrogenated amorphous silicon associated with the Staebler-Wronski effect

✍ J.David Cohen; David V. Lang; James P. Harbison; A.M. Sergent 📂 Article 📅 1983 🏛 Elsevier Science ⚖ 752 KB

We observe a reversible photo-induced modification in the bulk density of gap states in hydrogenated amorphous silicon associated with the Staebler-Wronski effect. Detailed analysis of deep level transient spectroscopy, admittance and thermally stimulated capacitance measurements indicates that as a