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Temperature dependence of oxidation induced stacking faults and oxygen incorporation in dislocation-free Czochralski silicon

✍ Scribed by M.S. Bawa; W.J. Bell; H.M. Grimes; T.J. Shaffner


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
363 KB
Volume
94
Category
Article
ISSN
0022-0248

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