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Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates

✍ Scribed by Patrik Ščajev; Jawad Hassan; Kęstutis Jarašiūnas; Masashi Kato; Anne Henry; J. Peder Bergman

Book ID: 107457048
Publisher: Springer US
Year: 2010
Tongue: English
Weight: 522 KB
Volume: 40
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1378-y

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