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In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC

✍ Scribed by Schöner, Adolf; Sugiyama, Naohiro; Takeuchi, Yuuichi; Malhan, Rajesh Kumar


Book ID
120880265
Publisher
Trans Tech Publications, Ltd.
Year
2008
Tongue
English
Weight
659 KB
Volume
600-603
Category
Article
ISSN
1662-9752

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A high density of double stacking faults consisting of six Si-C bilayers in cubic stacking sequence could be observed in 4H-SiC crystals with nitrogen doping concentrations exceeding 2 Â 10 19 cm À3 after annealing at temperatures above 1100 1C. The double stacking faults form by glide of two partia