✦ LIBER ✦

Influence of lattice polarity of nitrogen and aluminum doping on 4H-SiC epitaxial layer

✍ Scribed by Kazutoshi Kojima; Satoshi Kuroda; Hajime Okumura; Kazuo Arai

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

In Situ Nitrogen and Aluminum Doping in

✍ Schöner, Adolf; Sugiyama, Naohiro; Takeuchi, Yuuichi; Malhan, Rajesh Kumar 📂 Article 📅 2008 🏛 Trans Tech Publications, Ltd. 🌐 English ⚖ 659 KB

Temperature and doping dependencies of e

✍ Koizumi, Atsushi; Suda, Jun; Kimoto, Tsunenobu 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 402 KB

Optical Properties of Aluminium and Nitr

✍ Syväjärvi, Mikael; Yakimova, Rositza; Kakanakova-Georgieva, Anelia; Henry, Anne; 📂 Article 📅 2000 🏛 Cambridge University Press ⚖ 58 KB

Structural and electrical properties of

✍ G. Wagner; B. Thomas; J. Doerschel; J. Dolle; K. Irmscher 📂 Article 📅 2001 🏛 Springer US 🌐 English ⚖ 999 KB

Influence of Ga doping on the microstruc

✍ Marinova, Maya; Mantzari, Alkyoni; Andreadou, Ariadne; Lorenzzi, Jean; Ferro, Ga 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 454 KB

The role of excess silicon and in situ e

✍ A.A. Burk Jr.; L.B. Rowland 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 656 KB