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Influence of Ga doping on the microstructure of 3C-SiC layers grown on 4H-SiC substrates by VLS mechanism

✍ Scribed by Marinova, Maya; Mantzari, Alkyoni; Andreadou, Ariadne; Lorenzzi, Jean; Ferro, Gabriel; Polychroniadis, Efstathios K.


Book ID
118766635
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
454 KB
Volume
10
Category
Article
ISSN
1862-6351

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A TEM study of in-grown stacking faults
✍ Maya Marinova; Frederic Mercier; Alkioni Mantzari; Irina Galben; Didier Chaussen πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 299 KB

A transmission electron microscopy (TEM) study on the generation of stacking faults (SFs) and stacking fault (SF) induced inclusion during 3C-SiC growth by Continuous Feed Physical Vapour Transport (CF-PVT) method on 4H-SiC substrates is presented. A transition region of about 100 nm between the 4H-