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Study of the 3C-SiC layers grown on the 15R-SiC substrates

✍ Scribed by A. A. Lebedev; P. L. Abramov; E. V. Bogdanova; A. S. Zubrilov; S. P. Lebedev; D. K. Nelson; N. V. Seredova; A. N. Smirnov; A. S. Tregubova

Book ID
111444351
Publisher
Springer
Year
2009
Tongue
English
Weight
230 KB
Volume
43
Category
Article
ISSN
1063-7826

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A TEM study of in-grown stacking faults
A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates
✍ Maya Marinova; Frederic Mercier; Alkioni Mantzari; Irina Galben; Didier Chaussen πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 299 KB

A transmission electron microscopy (TEM) study on the generation of stacking faults (SFs) and stacking fault (SF) induced inclusion during 3C-SiC growth by Continuous Feed Physical Vapour Transport (CF-PVT) method on 4H-SiC substrates is presented. A transition region of about 100 nm between the 4H-