Doping-induced strain and relaxation of Al-doped 4H-SiC homoepitaxial layers

✍ Scribed by Huh, S. W.; Chung, H. J.; Benamara, M.; Skowronski, M.; Sumakeris, J. J.; Paisley, M. J.

• Book ID: 121184589
• Publisher: American Institute of Physics
• Year: 2004
• Tongue: English
• Weight: 683 KB
• Volume: 96
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.1789627