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High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

✍ Scribed by Alexandru, Mihaela; Banu, Viorel; Florentin, Matthieu; Jordá, Xavier; Vellvehi, Miguel; Tournier, Dominique


Book ID
125834395
Publisher
Trans Tech Publications, Ltd.
Year
2014
Tongue
English
Weight
478 KB
Volume
778-780
Category
Article
ISSN
1662-9752

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## Abstract The analysis of “nonideal” behaviour in current–voltage characteristics of fabricated Schottky diodes on 4H–SiC is carried out. An accurate theoretical modelling of the effect of the presence of inhomogeneities on the electron transport across the metal‐semiconductor interface is applie