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[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - High temperature characteristics of 5 kV, 20 A 4H-SiC PiN rectifiers

✍ Scribed by Singh, R.; Hefner, A.R.; Berning, D.; Palmour, J.W.

Book ID: 121847392
Publisher: Inst. Electr. Eng. Japan
Year: 2001
Tongue: Japanese
Weight: 386 KB
Category: Article
ISBN-13: 9784886860569
DOI: 10.1109/ISPSD.2001.934556

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