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[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - 5.5 kV normally-off low RonS 4H-SiC SEJFET

✍ Scribed by Asano, K.; Sugawara, Y.; Ryu, S.; Singh, R.; Palmour, J.; Hayashi, T.; Takayama, D.

Book ID: 121749712
Publisher: Inst. Electr. Eng. Japan
Year: 2001
Tongue: Japanese
Weight: 381 KB
Category: Article
ISBN-13: 9784886860569
DOI: 10.1109/ISPSD.2001.934551

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