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[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - Large area 4H-SiC power MOSFETs

✍ Scribed by Agarwal, A.; Sei-Hyung Ryu, ; Das, M.; Lipkin, L.; Palmour, J.; Saks, N.

Book ID: 124090842
Publisher: Inst. Electr. Eng. Japan
Year: 2001
Tongue: Japanese
Weight: 467 KB
Category: Article
ISBN-13: 9784886860569
DOI: 10.1109/ISPSD.2001.934585

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