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The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

✍ Scribed by J Senzaki; K Fukuda; S Imai; Y Tanaka; N Kobayashi; H Tanoue; H Okushi; K Arai


Book ID
108416172
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
226 KB
Volume
159-160
Category
Article
ISSN
0169-4332

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