## Abstract This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, gro
✦ LIBER ✦
Comparison of 3C–SiC, 6H–SiC and 4H–SiC MESFETs performances
✍ Scribed by C. Codreanu; M. Avram; E. Carbunescu; E. Iliescu
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 236 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1369-8001
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