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Nucleation of 3C–SiC on 6H–SiC from a liquid phase

✍ Scribed by Maher Soueidan; Gabriel Ferro; Olivier Kim-Hak; Florence Robaut; Olivier Dezellus; Jacques Dazord; François Cauwet; Jean-Claude Viala; Bilal Nsouli

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
762 KB
Volume
55
Category
Article
ISSN
1359-6454

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✦ Synopsis

The aim of this work is to elucidate the mechanism involved in the 3C-SiC formation during growth by a vapor-liquid-solid mechanism on 6H-SiC substrate. Polytype selection is shown to occur at the first stage of the experiments, before propane injection into the reactor. The contact of the seed with a Si-Ge melt during the initial heating ramp causes the formation of 3C-SiC islands on the seed surface, probably below 1200 °C. The proposed mechanism first involves a partial dissolution of the seed in a Ge-rich liquid which becomes C-supersaturated. Then the Si content of the liquid rapidly increases, which provokes the precipitation of the dissolved carbon in the form of 3C-SiC islands. When growth starts upon propane injection, these islands enlarge and coalesce to form a continuous 3C-SiC layer. If the growth temperature is too high (P1550 °C), the initial 3C-SiC islands are dissolved and homoepitaxial layers are obtained.

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