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Fabrication and characterization of 4H-SiC planar MESFETs

✍ Scribed by Hoon Joo Na; Jeong Hyun Moon; Jeong Hyuk Yim; Jae Bin Lee; Hyeong Joon Kim


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
189 KB
Volume
83
Category
Article
ISSN
0167-9317

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An improved small-signal equivalent circ
✍ Yuehang Xu; Yunchuan Guo; Ruimin Xu; Bo Yan; Yunqiu Wu πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 327 KB

## Abstract The frequency‐dependence of parasitic resistances (R~s~ and R~d~) for 4H‐SiC power MESFETs is empirical modeled by adding two disperse parameters based on conventional small‐signal equivalent circuit (CSEC). And a new extraction procedure for the modified SEC parameters is also proposed