✦ LIBER ✦

An improved small-signal equivalent circuit model for 4H-SIC power mesfets

✍ Scribed by Yuehang Xu; Yunchuan Guo; Ruimin Xu; Bo Yan; Yunqiu Wu

Publisher: John Wiley and Sons
Year: 2008
Tongue: English
Weight: 327 KB
Volume: 50
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.23397

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✦ Synopsis

Abstract

The frequency‐dependence of parasitic resistances (R~s~ and R~d~) for 4H‐SiC power MESFETs is empirical modeled by adding two disperse parameters based on conventional small‐signal equivalent circuit (CSEC). And a new extraction procedure for the modified SEC parameters is also proposed. The calculated S‐parameters using the modified SEC model (MSEC) fit the measured ones very well up to 20 GHz. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1455–1458, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23397

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