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An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT

✍ Scribed by Han-Yu Chen; Kun-Ming Chen; Guo-Wei Huang; Chun-Yen Chang; Tiao-Yuan Huang

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 128 KB
Volume: 44
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.20666

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## Abstract An improved model of a modified intrinsic equivalent circuit of delta‐doped AlGaAs/InGaAs/GaAs HEMT, which incorporates the additional capacitive effect physically present due to delta doping and a feedback resistor between gate and drain, is proposed. Admittance parameters of the devic