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Temperature and field dependence of stress induced leakage currents in very thin (<5 nm) gate oxides

✍ Scribed by Didier Goguenheim; Alain Bravaix; Bouchra Ananou; Céline Trapes; Francois Mondon; Gilles Reimbold

Book ID
117144722
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
503 KB
Volume
280
Category
Article
ISSN
0022-3093

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✍ D. Goguenheim; A. Bravaix; D. Vuillaume; F. Mondon; Ph. Candelier; M. Jourdain; 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 301 KB

Stress Induced Leakage Currents (SILC) are studied in 5 nm-thick oxides on both capacitors and N-MOSFETs after homogeneous FOWLER-NORDHEIM injections under high field stress (>9MV/cm) for both polarities and localized Hot-Carrier injections. Standard I(V) and high-frequency C(V) curves are used to m