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A new model for the description of gate voltage and temperature dependence of gate induced drain leakage (GIDL) in the low electric field region [DRAMs]

✍ Scribed by Rosar, M.; Leroy, B.; Schweeger, G.


Book ID
114538005
Publisher
IEEE
Year
2000
Tongue
English
Weight
178 KB
Volume
47
Category
Article
ISSN
0018-9383

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