Stress-induced leakage current at low field in NMOS and PMOS devices with ultra-thin nitrided gate oxide

✍ Scribed by M Fadlallah; G Ghibaudo; M Bidaud; O Simonetti; F Guyader

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 375 KB
• Volume: 72
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2003.12.044