A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides
✍ Scribed by D. Goguenheim; A. Bravaix; D. Vuillaume; F. Mondon; Ph. Candelier; M. Jourdain; A. Meinertzhagen
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 301 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
Stress Induced Leakage Currents (SILC) are studied in 5 nm-thick oxides on both capacitors and N-MOSFETs after homogeneous FOWLER-NORDHEIM injections under high field stress (>9MV/cm) for both polarities and localized Hot-Carrier injections. Standard I(V) and high-frequency C(V) curves are used to monitor the degradation in correlation to the Charge-Pumping (CP) technique. A systematic increase is found in SILC at low field (4-8 MV/cm) up to two orders of magnitude after FN injections and we report on the observation of SILC after localized hot hole injection. We find a correlation between the SILC increase and the interface state (Nit) generation. No trapped charge is detected in 5 m-thick gate oxides during FN stresses but the presence of slow states is evidenced, supporting a tunneling process through neutral oxide traps as a model for SILC.