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Synthesis of novel p-type nanocrystalline silicon from SiH2Cl2 and SiCl4 by rf plasma-enhanced chemical vapor deposition

โœ Scribed by Yali Li; Yoshie Ikeda; Yasutake Toyoshima; Hajime Shirai


Book ID
108289028
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
270 KB
Volume
506-507
Category
Article
ISSN
0040-6090

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Growth of stable amorphous silicon films
โœ Niikura, Chisato ;Matsuda, Akihisa ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 291 KB

## Abstract We proposed a multiโ€hollow dischargeโ€based plasmaโ€enhanced chemical vapor deposition (PECVD) technique with gasโ€flow control for preparation of highly stable aโ€Si:H films at high rates. The conditions for multiโ€hollow plasma production have been optimized under radioโ€frequency (RF) and