Growth of stable amorphous silicon films by gas-flow-controlled RF plasma-enhanced chemical vapor deposition

✍ Scribed by Niikura, Chisato ;Matsuda, Akihisa

• Book ID: 105365724
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 291 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200982844

✦ Synopsis

Abstract

We proposed a multi‐hollow discharge‐based plasma‐enhanced chemical vapor deposition (PECVD) technique with gas‐flow control for preparation of highly stable a‐Si:H films at high rates. The conditions for multi‐hollow plasma production have been optimized under radio‐frequency (RF) and low pressure conditions. The effectiveness of the gas‐flow control has been confirmed. As a result, a‐Si:H films with a SiH~2~ density of 0 at.% were successfully obtained at a relatively high growth rate of 0.27 nm/s by the novel technique, even under RF conditions. Further optimization of electrode configuration and deposition conditions would improve the growth rate of a‐Si:H films with high stability against light soaking.