𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Ion bombardment of amorphous silicon films during plasma-enhanced chemical vapor deposition in an rf discharge

✍ Scribed by A. S. Abramov; A. Ya. Vinogradov; A. I. Kosarev; M. V. Shutov; A. S. Smirnov; K. E. Orlov


Book ID
110120840
Publisher
Springer
Year
1998
Tongue
English
Weight
325 KB
Volume
43
Category
Article
ISSN
1063-7842

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Growth of stable amorphous silicon films
✍ Niikura, Chisato ;Matsuda, Akihisa 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 291 KB

## Abstract We proposed a multi‐hollow discharge‐based plasma‐enhanced chemical vapor deposition (PECVD) technique with gas‐flow control for preparation of highly stable a‐Si:H films at high rates. The conditions for multi‐hollow plasma production have been optimized under radio‐frequency (RF) and

Effect of rf bias (ion current density)
✍ Su B. Jin; Yoon S. Choi; Youn J. Kim; In S. Choi; Jeon G. Han 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 938 KB

a-SiO 2 Hardness rf bias Ion current density Low temperature Silicon oxide thin films are transparent protective coatings with anti-scratch, chemical resistant, barrier properties that have recently emerged as one of the prime coating technologies for depositing a range of functional optical coatin