## Abstract We proposed a multi‐hollow discharge‐based plasma‐enhanced chemical vapor deposition (PECVD) technique with gas‐flow control for preparation of highly stable a‐Si:H films at high rates. The conditions for multi‐hollow plasma production have been optimized under radio‐frequency (RF) and
✦ LIBER ✦
Ion bombardment of amorphous silicon films during plasma-enhanced chemical vapor deposition in an rf discharge
✍ Scribed by A. S. Abramov; A. Ya. Vinogradov; A. I. Kosarev; M. V. Shutov; A. S. Smirnov; K. E. Orlov
- Book ID
- 110120840
- Publisher
- Springer
- Year
- 1998
- Tongue
- English
- Weight
- 325 KB
- Volume
- 43
- Category
- Article
- ISSN
- 1063-7842
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