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Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride

✍ Scribed by P. G. Sennikov; S. V. Golubev; V. I. Shashkin; D. A. Pryakhin; M. N. Drozdov; B. A. Andreev; Yu. N. Drozdov; A. S. Kuznetsov; H. -J. Pohl


Book ID
110169027
Publisher
SP MAIK Nauka/Interperiodica
Year
2009
Tongue
English
Weight
187 KB
Volume
89
Category
Article
ISSN
0021-3640

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Plasma-enhanced chemical vapor depositio
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## Abstract The process of plasma chemical deposition of silicon was investigated from its tetrafluoride containing 99.99% of ^28^Si isotope in the form of thin layer of nano‐crystalline silicon on silicon substrate and of thick layer of polycrystalline silicon on the inner surface of quartz reacto

Effect of initial crystallized silicon l
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Using an internal inductively coupled plasma (ICP)-type-plasma enhanced vapor deposition system, microcrystalline silicon thin films were deposited as a function of H 2 /SiH 4 gas ratio at 180 Β°C. Especially, the effects of deposition with/without an initial thin silicon layer formed with a very hig