## Abstract The process of plasma chemical deposition of silicon was investigated from its tetrafluoride containing 99.99% of ^28^Si isotope in the form of thin layer of nanoβcrystalline silicon on silicon substrate and of thick layer of polycrystalline silicon on the inner surface of quartz reacto
β¦ LIBER β¦
Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride
β Scribed by P. G. Sennikov; S. V. Golubev; V. I. Shashkin; D. A. Pryakhin; M. N. Drozdov; B. A. Andreev; Yu. N. Drozdov; A. S. Kuznetsov; H. -J. Pohl
- Book ID
- 110169027
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2009
- Tongue
- English
- Weight
- 187 KB
- Volume
- 89
- Category
- Article
- ISSN
- 0021-3640
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